Epitaxial growth of Fe islands on LaAlO₃ (001) substratesZANOUNI, Mohamed; BEN AZZOUZ, Chiraz; BISCHOFF, Jean-Luc et al.Journal of crystal growth. 2014, Vol 391, pp 121-129, issn 0022-0248, 9 p.Article

Calculations of parameters of RHEED oscillations using different models of the scattering potentialMITURA, Zbigniew.Journal of crystal growth. 2014, Vol 401, pp 364-366, issn 0022-0248, 3 p.Conference Paper

Formation of a Buffer Layer for Graphene on C-Face SiC{0001}GUOWEI HE; SRIVASTAVA, N; FEENSTRA, R. M et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 819-827, issn 0361-5235, 9 p.Conference Paper

Honouring the two Braggs: the first X-ray crystal structure and the first X-ray spectrometerHELLIWELL, John R.Crystallography reviews. 2013, Vol 19, Num 1-4, pp 108-116, issn 0889-311X, 9 p.Article

Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrateSUZUKI, Hidetoshi; ITO, Daiki; FUKUYAMA, Atsuhiko et al.Journal of crystal growth. 2013, Vol 380, pp 148-152, issn 0022-0248, 5 p.Article

Molecular beam epitaxy of Co_xFe_4―xN (0.4 < x < 2.9) thin films on SrTiO₃(001) substratesSANAI, Tatsunori; ITO, Keita; TOKO, Kaoru et al.Journal of crystal growth. 2012, Vol 357, pp 53-57, issn 0022-0248, 5 p.Article

Self-Assembly of Cobalt-Phthalocyanine Molecules on Epitaxial Graphene on Ir(111)HÄMÄLÄINEN, Sampsa K; STEPANOVA, Mariia; DROST, Robert et al.Journal of physical chemistry. C. 2012, Vol 116, Num 38, pp 20433-20437, issn 1932-7447, 5 p.Article

Growth of thin zirconium oxide films on the 6H―SiC(0001) surfaceIDCZAK, K; MAZUR, P; MARKOWSKI, L et al.Applied surface science. 2012, Vol 258, Num 21, pp 8349-8353, issn 0169-4332, 5 p.Conference Paper

Buffer-layer-enhanced growth of a single-domain LaB6 (1 0 0) epitaxial thin film on a MgO (1 0 0) substrate via pulsed laser depositionKATO, Y; ARAI, H; YOSHIMOTO, M et al.Journal of crystal growth. 2011, Vol 330, Num 1, pp 39-42, issn 0022-0248, 4 p.Article

Epitaxial growth and magnetic characterization of ferromagnetic Co₄N thin films on SrTiO3(001) substrates by molecular beam epitaxyITO, Keita; HARADA, Kazunori; TOKO, Kaoru et al.Journal of crystal growth. 2011, Vol 336, Num 1, pp 40-43, issn 0022-0248, 4 p.Article

The epitaxial crystalline silicon-oxynitride layer on SiC(0001): Formation of an ideal SiC-insulator interfaceTOCHIHARA, Hiroshi; SHIRASAWA, Tetsuroh.Progress in surface science. 2011, Vol 86, Num 11-12, pp 295-327, issn 0079-6816, 33 p.Article

Growth of PbSe on ZnTe/GaAs(2 1 1)B by molecular beam epitaxyWANG, X. J; HOU, Y. B; CHANG, Y et al.Journal of crystal growth. 2010, Vol 312, Num 7, pp 910-913, issn 0022-0248, 4 p.Article

The growth and stability of Fe layers on the Mo(1 1 1) surfaceKLEIN, Sz; STEPANOVSKYI, S; SLIWINSKI, J et al.Applied surface science. 2010, Vol 256, Num 15, pp 4801-4805, issn 0169-4332, 5 p.Conference Paper

Critical thickness for InAs quantum dot formation on (311)B InP substratesCAROFF, P; BERTRU, N; LU, W et al.Journal of crystal growth. 2009, Vol 311, Num 9, pp 2626-2629, issn 0022-0248, 4 p.Article

Effect of different Ge predeposition amounts on SiC grown on Si (1 1 1)ZHONGLIANG LIU; PENG REN; JINFENG LIU et al.Applied surface science. 2009, Vol 255, Num 11, pp 5698-5701, issn 0169-4332, 4 p.Article

Kinematic simulation of convergent beam low-energy electron diffraction patternsRUBEN, G; JESSON, D. E; PAGANIN, D. M et al.Optik (Stuttgart). 2009, Vol 120, Num 9, pp 401-408, issn 0030-4026, 8 p.Article

Layer-by-layer growth and growth-mode transition of SrRuO₃ thin films on atomically flat single-terminated SrTiO₃ (111) surfacesCHANG, Jaewan; PARK, Yoon-Seok; LEE, Jong-Woo et al.Journal of crystal growth. 2009, Vol 311, Num 14, pp 3771-3774, issn 0022-0248, 4 p.Article

Organic surfaces exposed by self-assembled organothiol monolayers: Preparation, characterization, and applicationKIND, Martin; WÖLL, Christof.Progress in surface science. 2009, Vol 84, Num 7-8, pp 230-278, issn 0079-6816, 49 p.Article

RHEED wave function and its applicationsKAWAMURA, T; MAKSYM, P. A.Surface science reports. 2009, Vol 64, Num 3, pp 122-137, issn 0167-5729, 16 p.Article

Epitaxial films for Ge-Sb-Te phase change memorySHAYDUK, R; BRAUN, W.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2215-2219, issn 0022-0248, 5 p.Conference Paper

Formation of AIN layer on (111)A1 substrate by ammonia nitridationHONDA, Tohru; YAMAMOTO, Hiromi; SAWADAISHI, Masashi et al.Journal of crystal growth. 2009, Vol 311, Num 10, pp 2844-2846, issn 0022-0248, 3 p.Conference Paper

Formation of In_0.5Ga_0.5As ring-and-hole structure by droplet molecular beam epitaxyPANKAOW, N; PANYAKEOW, S; RATANATHAMMAPHAN, S et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1832-1835, issn 0022-0248, 4 p.Conference Paper

Growth of high-quality ZnO films on Al₂O₃ (0001) by plasma-assisted molecular beam epitaxyPARK, J. S; HONG, S. K; IM, I. H et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2163-2166, issn 0022-0248, 4 p.Conference Paper

The growth and characterization of an InN layer on AIN/Si (111)KIM, M. D; PARK, S. R; OH, J. E et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2016-2020, issn 0022-0248, 5 p.Conference Paper

One-dimensional atomic and electronic structures of submonolayer potassium deposited on stepped Ni(7 5 5) surfaceOGAWA, Koji; HARADA, Shunsuke; NAKANISHI, Koji et al.Applied surface science. 2008, Vol 254, Num 23, pp 7642-7646, issn 0169-4332, 5 p.Conference Paper